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vuv4 mppcs  (Hamamatsu)

 
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    Hamamatsu vuv4 mppcs
    Vuv4 Mppcs, supplied by Hamamatsu, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/vuv4+mppcs/hamamatsu+vuv4/10__1016_slash_j__nima__2024__169347-227-8-8
    Average 90 stars, based on 1 article reviews
    vuv4 mppcs - by Bioz Stars, 2026-10
    90/100 stars

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    Related Articles

    other:

    Article Title: Measurement of the photon detection efficiency of Hamamatsu VUV4 SiPMS at cryogenic temperature
    Article Snippet: [11] G. Gallina, et al., Characterization of the hamamatsu VUV4 MPPCs for nEXO, Nucl.

    Article Title: Characterization of the Hamamatsu VUV4 MPPCs for nEXO
    Article Snippet: This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the design of the nEXO detector.

    Article Title: Characterization of the Hamamatsu VUV4 MPPCs for nEXO
    Article Snippet: This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF Silicon Photo-Multipliers for the final design of the nEXO detector.

    Article Title: Characterization of the Hamamatsu VUV4 MPPCs for nEXO
    Article Snippet: Nuclear Inst. and Methods in Physics Research, A 940 (2019) 371–379 Contents lists available at ScienceDirect Nuclear Inst. and Methods in Physics Research, A journal homepage: www.elsevier.com/locate/nima Characterization of the Hamamatsu VUV4 MPPCs for nEXO G. Gallina 1,2,∗, P. Giampa 1, F. Retière 1, J. Kroeger 1,a, G. Zhang 1,b, M. Ward 1,c, P. Margetak 1, G. Li 3, T. Tsang 4, L. Doria 1,d, S. Al Kharusi 5, M. Alfaris 6, G. Anton 7, I.J.



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    Image Search Results


    Summary of the SiPM specification whose secondary photon emission is studied in this work [ <xref ref-type= 2 , 6 ]. The Fill Factor is defined as the ratio between the photon-sensitive area to the total area of the SiPM. The breakdown voltages are extracted from the SiPM I-V curves; defined as the voltage for which the first derivative with respect to the voltage of the SiPM current (in log space) is at the maximum [ 23 ]." width="100%" height="100%">

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Summary of the SiPM specification whose secondary photon emission is studied in this work [ 2 , 6 ]. The Fill Factor is defined as the ratio between the photon-sensitive area to the total area of the SiPM. The breakdown voltages are extracted from the SiPM I-V curves; defined as the voltage for which the first derivative with respect to the voltage of the SiPM current (in log space) is at the maximum [ 23 ].

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Top row: Emission microscopy image (EMMI) of the HPK VUV4 biased at 11.2 ± 1.0 V of over voltage. Bottom row: EMMI of FBK VUV-HD3 biased at 13 ± 1 V of over voltage. Both EMMIs were taken with the same camera exposure time and objective lens: LMPLFLN20X (20× magnification).

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Top row: Emission microscopy image (EMMI) of the HPK VUV4 biased at 11.2 ± 1.0 V of over voltage. Bottom row: EMMI of FBK VUV-HD3 biased at 13 ± 1 V of over voltage. Both EMMIs were taken with the same camera exposure time and objective lens: LMPLFLN20X (20× magnification).

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques: Microscopy

    Composite EMMI of the HPK VUV4 and FBK VUV-HD3 SiPMs at 4× magnification and V ov = 11.0 V and 13.0 V (±1.0 V), respectively. The regions enclosed in the white boxes are the areas where we zoomed to 20× magnification for spectral measurements. Both EMMI were taken with the same camera exposure time and objective lens: PLCN4X-1-7.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Composite EMMI of the HPK VUV4 and FBK VUV-HD3 SiPMs at 4× magnification and V ov = 11.0 V and 13.0 V (±1.0 V), respectively. The regions enclosed in the white boxes are the areas where we zoomed to 20× magnification for spectral measurements. Both EMMI were taken with the same camera exposure time and objective lens: PLCN4X-1-7.

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Summary of the exposure time ( t ET ), over-voltage V ov , total charge Q ET (as defined by Equation ( <xref ref-type= 2 )) and average current 〈 i ( t ) 〉 during SiPM spectral measurements." width="100%" height="100%">

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Summary of the exposure time ( t ET ), over-voltage V ov , total charge Q ET (as defined by Equation ( 2 )) and average current 〈 i ( t ) 〉 during SiPM spectral measurements.

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Pictorial representation of how the quantity ρ surf is calculated for the HPK VUV4 MPPC (top) and FBK VUV-HD3 (bottom) SiPM combining the information of and . R k , with k = { 1 , 2 , 3 } are selected regions where the photon count is measured. See text for more details.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Pictorial representation of how the quantity ρ surf is calculated for the HPK VUV4 MPPC (top) and FBK VUV-HD3 (bottom) SiPM combining the information of and . R k , with k = { 1 , 2 , 3 } are selected regions where the photon count is measured. See text for more details.

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Values of ρ surf for the FBK VUV-HD3 and HPK VUV4 SiPMs.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Values of ρ surf for the FBK VUV-HD3 and HPK VUV4 SiPMs.

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Spectra of the HPK VUV4 and FBK VUV-HD3 SiPMs as a function of the applied over-voltage.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Spectra of the HPK VUV4 and FBK VUV-HD3 SiPMs as a function of the applied over-voltage.

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Photon yields (number of photons emitted per charge carrier) measured in the wavelength range [450–1020] nm for the FBK VUV-HD3 and HPK VUV4 SiPMs as a function of the applied over-voltage. The last line of the table represents the photon yields measured in [ <xref ref-type= 15 , 24 ], respectively." width="100%" height="100%">

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Photon yields (number of photons emitted per charge carrier) measured in the wavelength range [450–1020] nm for the FBK VUV-HD3 and HPK VUV4 SiPMs as a function of the applied over-voltage. The last line of the table represents the photon yields measured in [ 15 , 24 ], respectively.

    Article Snippet: For this publication, we focused on two SiPMs, considered as photo-sensor candidates for the nEXO experiment: one Fondazione Bruno Kessler (FBK) VUVHD Low Field (LF) Low After Pulse (Low AP) SiPM (VUV-HD3) and one Hamamatsu Photonics (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Summary of the SiPM specification whose secondary photon emission is studied in this work [ <xref ref-type= 2 , 6 ]. The Fill Factor is defined as the ratio between the photon-sensitive area to the total area of the SiPM. The breakdown voltages are extracted from the SiPM I-V curves; defined as the voltage for which the first derivative with respect to the voltage of the SiPM current (in log space) is at the maximum [ 23 ]." width="100%" height="100%">

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Summary of the SiPM specification whose secondary photon emission is studied in this work [ 2 , 6 ]. The Fill Factor is defined as the ratio between the photon-sensitive area to the total area of the SiPM. The breakdown voltages are extracted from the SiPM I-V curves; defined as the voltage for which the first derivative with respect to the voltage of the SiPM current (in log space) is at the maximum [ 23 ].

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Top row: Emission microscopy image (EMMI) of the HPK VUV4 biased at 11.2 ± 1.0 V of over voltage. Bottom row: EMMI of FBK VUV-HD3 biased at 13 ± 1 V of over voltage. Both EMMIs were taken with the same camera exposure time and objective lens: LMPLFLN20X (20× magnification).

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Top row: Emission microscopy image (EMMI) of the HPK VUV4 biased at 11.2 ± 1.0 V of over voltage. Bottom row: EMMI of FBK VUV-HD3 biased at 13 ± 1 V of over voltage. Both EMMIs were taken with the same camera exposure time and objective lens: LMPLFLN20X (20× magnification).

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques: Microscopy

    Composite EMMI of the HPK VUV4 and FBK VUV-HD3 SiPMs at 4× magnification and V ov = 11.0 V and 13.0 V (±1.0 V), respectively. The regions enclosed in the white boxes are the areas where we zoomed to 20× magnification for spectral measurements. Both EMMI were taken with the same camera exposure time and objective lens: PLCN4X-1-7.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Composite EMMI of the HPK VUV4 and FBK VUV-HD3 SiPMs at 4× magnification and V ov = 11.0 V and 13.0 V (±1.0 V), respectively. The regions enclosed in the white boxes are the areas where we zoomed to 20× magnification for spectral measurements. Both EMMI were taken with the same camera exposure time and objective lens: PLCN4X-1-7.

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Summary of the exposure time ( t ET ), over-voltage V ov , total charge Q ET (as defined by Equation ( <xref ref-type= 2 )) and average current 〈 i ( t ) 〉 during SiPM spectral measurements." width="100%" height="100%">

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Summary of the exposure time ( t ET ), over-voltage V ov , total charge Q ET (as defined by Equation ( 2 )) and average current 〈 i ( t ) 〉 during SiPM spectral measurements.

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Pictorial representation of how the quantity ρ surf is calculated for the HPK VUV4 MPPC (top) and FBK VUV-HD3 (bottom) SiPM combining the information of and . R k , with k = { 1 , 2 , 3 } are selected regions where the photon count is measured. See text for more details.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Pictorial representation of how the quantity ρ surf is calculated for the HPK VUV4 MPPC (top) and FBK VUV-HD3 (bottom) SiPM combining the information of and . R k , with k = { 1 , 2 , 3 } are selected regions where the photon count is measured. See text for more details.

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Values of ρ surf for the FBK VUV-HD3 and HPK VUV4 SiPMs.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Values of ρ surf for the FBK VUV-HD3 and HPK VUV4 SiPMs.

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Spectra of the HPK VUV4 and FBK VUV-HD3 SiPMs as a function of the applied over-voltage.

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Spectra of the HPK VUV4 and FBK VUV-HD3 SiPMs as a function of the applied over-voltage.

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques:

    Photon yields (number of photons emitted per charge carrier) measured in the wavelength range [450–1020] nm for the FBK VUV-HD3 and HPK VUV4 SiPMs as a function of the applied over-voltage. The last line of the table represents the photon yields measured in [ <xref ref-type= 15 , 24 ], respectively." width="100%" height="100%">

    Journal: Sensors (Basel, Switzerland)

    Article Title: Characterisation of SiPM Photon Emission in the Dark

    doi: 10.3390/s21175947

    Figure Lengend Snippet: Photon yields (number of photons emitted per charge carrier) measured in the wavelength range [450–1020] nm for the FBK VUV-HD3 and HPK VUV4 SiPMs as a function of the applied over-voltage. The last line of the table represents the photon yields measured in [ 15 , 24 ], respectively.

    Article Snippet: A new apparatus for spectral and imaging analysis was developed at TRIUMF and used to measure the light emitted by the two SiPMs considered as photo-sensor candidates for the nEXO neutrinoless double-beta decay experiment: one Fondazione Bruno Kessler (FBK) VUV-HD Low Field (LF) Low After Pulse (Low AP) (VUV-HD3) SiPM and one Hamamatsu Photonics K.K. (HPK) VUV4 Multi-Pixel Photon Counter (MPPC).

    Techniques: